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インジウムリン/Inp

■InP Semiconduct Wafers

Item Unit Specifications Note
Conduct Type (n-type) (p-type)
Crystal growth method VGF
Dopant S,SnUndopedZn
Diameter inch 2" / 3" / 4"
Wafer Orientation (100) ± 0.5° Other orientations available
OF/IF US,EJ
Carrier Concentration cm-3 (0.8-8)x1018(1-10)x1015(0.8-8)x1018
Mobility cm2/v.s 1000-25003000-500050-100
Etch Pit Density(EPD) /cm2 100-5000≤ 5000≤ 500
Laser marking Upon request
Thickness µm (350-675) ± 25 µm Customer requirement
TTV(P/P) µm ≤ 10
TTV(P/E) µm ≤ 15
Warp µm ≤ 15
Surface Side 1 Polished/Etched
Side 2 Polished/Etched
Epi-Ready Yes
Package Cassette or single
wafer container

■InP Semi-insulating Wafers

Item Unit Specifications Note
Crystal growth method VGF
Dopant Fe
Diameter inch 2" / 3" / 4"
Wafer Orientation (100) ± 0.5° Other orientations available
OF/IF US,EJ
Resistivity(at RT) ohm.cm ≧0.5x107
Mobility cm2/v.s ≧1000
Etch Pit Density(EPD) /cm2 1500-5000
Laser marking Upon request
Thickness µm (350-675) ± 25 µm Customer requirement
TTV(P/P) µm ≤ 10
TTV(P/E) µm ≤ 15
Warp µm ≤ 15
Surface Side 1 Polished/Etched
Side 2 Polished/Etched
Epi-Ready Yes
Package Cassette or single
wafer container


InPウェハ
2″InPウェハー