インジウムリン／Inp
InP Semiconduct Wafers
| Item | Unit | Specifications | Note | ||
|---|---|---|---|---|---|
| Conduct Type | （n-type） | （p-type） | |||
| Crystal growth method | VGF | ||||
| Dopant | S,Sn | Undoped | Zn | ||
| Diameter | inch | 2" ／ 3" ／ 4" | |||
| Wafer Orientation | （100）± 0.5° | Other orientations available | |||
| OF/IF | US,EJ | ||||
| Carrier Concentration | cm-3 | （0.8-8）x1018 | （1-10）x1015 | （0.8-8）x1018 | |
| Mobility | cm2／v.s | 1000-2500 | 3000-5000 | 50-100 | |
| Etch Pit Density（EPD） | ／cm2 | 100-5000 | ≤ 5000 | ≤ 500 | |
| Laser marking | Upon request | ||||
| Thickness | µm | （350-675）± 25 µm | Customer requirement | ||
| TTV（P／P） | µm | ≤ 10 | |||
| TTV（P／E） | µm | ≤ 15 | |||
| Warp | µm | ≤ 15 | |||
| Surface | Side 1 | Polished/Etched | Side 2 | Polished/Etched | |
| Epi-Ready | Yes | ||||
| Package | Cassette or single wafer container |
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InP Semi-insulating Wafers
| Item | Unit | Specifications | Note |
|---|---|---|---|
| Crystal growth method | VGF | ||
| Dopant | Fe | ||
| Diameter | inch | 2" ／ 3" ／ 4" | |
| Wafer Orientation | （100）± 0.5° | Other orientations available | |
| OF／IF | US,EJ | ||
| Resistivity（at RT） | ohm.cm | ≧0.5×107 | |
| Mobility | cm2／v.s | ≧1000 | |
| Etch Pit Density（EPD） | ／cm2 | 1500-5000 | |
| Laser marking | Upon request | ||
| Thickness | µm | （350-675）± 25 µm | Customer requirement |
| TTV（P／P） | µm | ≤ 10 | |
| TTV（P／E） | µm | ≤ 15 | |
| Warp | µm | ≤ 15 | |
| Surface | Side 1 | Polished／Etched | Side 2 | Polished／Etched |
| Epi-Ready | Yes | ||
| Package | Cassette or single wafer container |
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